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FJA13009TU

Manufacturer:

On Semiconductor

Mfr.Part #:

FJA13009TU

Datasheet:
Description:

BJTs TO-3P Through Hole NPN 130 W Collector Base Voltage (VCBO):700 V Collector Emitter Voltage (VCEO):400 V Emitter Base Voltage (VEBO):9 V

ParameterValue
Voltage Rating (DC)400 V
Length15.8 mm
Width5 mm
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
Height20.1 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Frequency4 MHz
Number of Elements1
Current Rating12 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation130 W
Power Dissipation130 W
Max Collector Current12 A
Collector Emitter Breakdown Voltage400 V
Transition Frequency4 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)400 V
Gain Bandwidth Product4 MHz
Collector Base Voltage (VCBO)700 V
Collector Emitter Saturation Voltage1 V
Emitter Base Voltage (VEBO)9 V
hFE Min6
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Transistor TypeNPN

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